 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| CE CHENYI ELECTRONICS FEATURES . The zener voltage are graded according to the international E24 standard .Other voltage tolerance and higher zener voltage on request. BZX55-C0V8 THRU BZX55-C200 0.5W SILICON PLANAR ZENER DIODES MECHANICAL DATA . Case: DO-35 glass case . Polarity: Color band denotes cathode end . Weight: Approx. 0.13gram ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)(TA=25 ) Symbols Zener current see table "Characteristics" Power dissipation at TA=50 Junction temperature Storage temperature range Ptot TJ TSTG Value Units 5001) 175 -65 to + 175 mW 1)Valid provided that at a distance of 8mm from case are kept at ambient temperature ELECTRICAL CHARACTERISTICS(TA=25 ) Symbols Thermal resistance junction to ambient Forward voltage at IF=100mA R JA Min. Typ. Max. 3001) 1 Units K/W V VF 1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 1 of 4 CE CHENYI ELECTRONICS BZX55-C0V8 THRU BZX55-C200 0.5W SILICON PLANAR ZENER DIODES BXZ55... SILICON PLANAR ZENER DIODES Zener Voltage Range1) Type VZNOM V BZX 55/C 0V8 3) BZX 55/C 2V0 BZX 55/C 2V4 BZX 55/C 2V7 BZX 55/C 3V0 BZX 55/C 3V3 BZX 55/C 3V6 BZX 55/C 3V9 BZX 55/C 4V3 BZX 55/C 4V7 BZX 55/C 5V1 BZX 55/C 5V6 BZX 55/C 6V2 BZX 55/C 6V8 BZX 55/C 7V5 BZX 55/C 8V2 BZX 55/C 9V1 BZX 55/C 10 BZX 55/C 11 BZX 55/C 12 BZX 55/C 13 BZX 55/C 15 BZX 55/C 16 BZX 55/C 18 BZX 55/C 20 0.8 2.0 2.4 2.7 3 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 5 IZT for VZT 2) mA V 0.73...0.83 1.9...2.1 2.28...2.56 2.5...2.9 2.8...3.2 3.1...3.5 3.4...3.8 3.7...4.1 4.0...4.6 4.4...5.0 4.8...5.4 5.2...6.0 5.8...6.6 6.4...7.2 7.0...7.9 7.7...8.7 8.5...9.6 9.4...10.6 10.4...11.6 11.4...12.7 12.4...14.1 13.8...15.6 15.3...17.1 16.8...19.1 18.8...21.2 <75 <60 <35 <25 <10 <8 <7 <7 <10 <15 <20 <20 <26 <30 <40 <50 <55 <70 <70 <90 <110 <110 <170 <170 <220 <0.1 <2 <50 <550 <450 <200 <150 1 2.0 3.0 5.0 6.2 6.8 7.5 8.2 9.1 10.0 11.0 12 13 15 0.03...0.11 <1 <0.5 <20 <10 -0.06...-0.03 -0.05...+0.02 -0.02...+0.02 -0.05...+0.05 0.03...0.06 0.03...0.07 0.03...0.07 0.03...0.08 0.03...0.09 0.03...0.1 <85 <600 <40 <2 <1 -0.08...-0.05 <8 <50 Dynamic resistance Reverse leakage current IR and IR 2) at VR mA <100 <50 <10 <4 A <200 <100 <50 -0.09...-0.06 A V Temp coefficient of zener voltage rzjt and rzjk at Izk TKVZ %/K -0.26...-0.23 Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 2 of 4 CE CHENYI ELECTRONICS BZX55-C0V8 THRU BZX55-C200 0.5W SILICON PLANAR ZENER DIODES BXZ55... SILICON PLANAR ZENER DIODES BZX 55/C 22 BZX 55/C 24 BZX 55/C 27 BZX 55/C 30 BZX 55/C 33 BZX 55/C 36 BZX 55/C 39 BZX 55/C 43 BZX 55/C 47 BZX 55/C 51 BZX 55/C 56 BZX 55/C 62 BZX 55/C 68 BZX 55/C 75 BZX 55/C 82 BZX 55/C 91 BZX 55/C 100 BZX 55/C 110 BZX 55/C 120 BZX 55/C 130 BZX 55/C 150 BZX 55/C 160 BZX 55/C 180 BZX 55/C 200 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 1 2.5 5 20.8...23.3 22.8...25.6 25.1...28.9 28...32 31...35 34...38 37...41 40...46 44...50 48....54 52...60 58...66 64...72 70...79 77...87 85...96 94...106 104...116 114...127 124...141 138...156 153...171 168...191 188...212 <1500 <2000 <5000 <5000 <5500 <6000 <6500 <7000 <8500 <10000 0.1 <10 0.25 <1000 <0.1 <500 <500 <600 <700 <700 0.5 <5 <220 <80 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 0.05...0.12 0.04...0.12 1 <2 <55 <80 16 18 20 22 1)Tested with pulses tp=20ms 2)Valid provided that leads are kept at ambient temperature at a distance of 8mm from case 3)The BZX55-C0V8 is silicon diode with operation in forward direction. Hence, the index of all parameters should be 'F' instead of 'Z'. Connect the cathode lead to the negative pole. Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 3 of 4 CE CHENYI ELECTRONICS BZX55-C0V8 THRU BZX55-C200 0.5W SILICON PLANAR ZENER DIODES BXZ55... SILICON PLANAR ZENER DIODES BREAKDOWN CHARACTERISTICS AT TJ=CONSTANT(PULSED) BREAKDOWN CHARACTERISTICS AT TJ=CONSTANT(PULSED) Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 4 of 4 |
Price & Availability of BZX55C4V7
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |